Fabrication and characteristics of a metal/ferroelectric/polycrystalline silicon/insulator/silicon field effect transistor

摘要

A n-channel metal/ferroelectric/polycrystalline silicon/insulator/silicon structure field effect transistor (FET) with a Pb(Zr_(0.52)Ti_(0.48))O_3 ferroelectric layer has been proposed and demonstrated. The Pb(Zr_(0.52)Ti_(0.48))O_3 ferroelectric layer (200 nm) was deposited by radio frequency magnetron sputtering. The counterclockwise drain current-gate voltage (I_d-V_g) hysteresis loops of the ferroelectric FET demonstrate the memory effect of the device. The counterclockwise hysteresis loops are attributed to the ferroelectric polarization of the Pb(Zr_(0.52)Ti_(0.48))O_3 film. The memory window measured from the I_d-V_g characteristics is about 2.6 V as the V_g sweeps between -5 and +5 V. The endurance characteristics of the device have been investigated.