Control of InN quantum dot density using rare gases in metal organic vapor phase epitaxy

摘要

Indium nitride (InN) quantum dots have been grown on gallium nitride (GaN) templates with heights of 10 and 20 nm. The authors demonstrate that the surface densities of the dots are strongly affected by the nature of the carrier gas used during the growth, which can be used to modulate the surface density. The authors show here that replacing nitrogen by helium leads to a decrease of the dot surface density, while argon induces a strong increase of the density. Although validated for the InN/GaN system, this approach has a more general scope and can be extended to other material systems.