首页> 外文期刊>Applied Physics Letters >Temperature dependence of the first-order metal-insulator transition in VO_2 and programmable critical temperature sensor
【24h】

Temperature dependence of the first-order metal-insulator transition in VO_2 and programmable critical temperature sensor

机译:VO_2和可编程临界温度传感器中一阶金属-绝缘体转变的温度依赖性

获取原文
获取原文并翻译 | 示例
       

摘要

For VO_2-based two-terminal devices, the first-order metal-insulator transition (MIT, jump) is controlled by an applied voltage and temperature, and an intermediate monoclinic metal phase between the MIT and the structural phase transition (SPT) is observed. The conductivity of this phase linearly increases with increasing temperature up to T_(SPT) ≈ 68℃ and becomes maximum at T_(SPT). Optical microscopic observation reveals the absence of a local current path in the metal phase. The current uniformly flows throughout the surface of the VO_2 film when the MIT occurs. This device can be used as a programmable critical temperature sensor where the applied voltage is controlled by a program.
机译:对于基于VO_2的两端子设备,一阶金属-绝缘体跃迁(MIT,jump)由施加的电压和温度控制,并且观察到MIT与结构相变(SPT)之间存在中间单斜晶金属相。该相的电导率随着温度的升高而线性增加,直至T_(SPT)≈68℃,并在T_(SPT)时达到最大值。光学显微镜观察表明在金属相中不存在局部电流路径。当发生MIT时,电流均匀地流过VO_2膜的整个表面。该设备可用作可编程的临界温度传感器,其中所施加的电压由程序控制。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号