High-quality thin-film passivation by catalyzer-enhanced chemical vapor deposition for organic light-emitting diodes

摘要

The thin-film passivation of organic light-emitting diodes (OLEDs) by a SiN_x film grown by catalyzer-enhanced chemical vapor deposition was investigated. Using a tungsten catalyzer connected in series, a high-density SiN_x passivation layer was deposited on OLEDs and bare polycarbonate (PC) substrates at a substrate temperature of 50℃. Despite the low substrate temperature, the single SiN_x passivation layer, grown on the PC substrate, exhibited a low water vapor transmission rate of (2-6) x 10~(-2) g/m~2/day and a high transmittance of 87%. In addition, current-voltage-luminescence results of an OLED passivated with a 150-nm-thick SiN_x film compared to nonpassivated samplcwere identical indicating that the performance of an OLED is not critically affected by radiation from tungsten catalyzer during the SiN_x deposition. Moreover, the lifetime to half initial luminance of an OLED passivated with the single 150-nm-thick SiN_x layer was 2.5 times longer than that of a nonpassivated sample.