Reversible Charge Injection In Antiferroelectric Thin Films

摘要

High-energy storage antiferroelectric capacitors operated in a high speed require the quick release of stored charges after the removal of the electrical field accompanying ferroelectric-to-antiferroelectric phase transition. However, the phase-transition time can vary from a few nanoseconds to milliseconds due to the reversible charge injection into the film to temporally stabilize the high-field ferroelectric phase. The consequent theoretical modeling discloses the nearly Ohmic contact of an antiferroelectric Au/Cr/Pb(Zr_(0.95)Ti_(0.05))O_3/Pt thin-film capacitor for the charge injection unlike the Schottky emission of a typical ferroelectric capacitor.