Carbon clusters in N-doped ZnO by metal-organic chemical vapor deposition

摘要

We employed transmission electron microscopy and Raman spectra to investigate the behavior of impurity carbon usually unintentionally introduced in N-doped ZnO by metal-organic chemical vapor deposition. Unintentional doped carbon may form graphite clusters along grain boundaries resulting in n-type domains and possibly be a big obstacle for the realization of p-type conductivity. The enhanced desorption rate of hydrocarbon radicals by high temperature and oxygen atom will significantly suppress carbon incorporation rate. The results provide understandings of the formation mechanism of carbon clusters and help us find some available routines to minimize carbon impurity for realization of p-type N-doped ZnO.