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Cesium Hydroxide Doped Tris-(8-hydroxyquinoline) Aluminumrnas An Effective Electron Injection Layer In Inverted Bottom-emissionrnorganic Light Emitting Diodes

机译:氢氧化铯掺杂的Tris-(8-羟基喹啉)铝反向底部发射有机发光二极管中的有效电子注入层

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摘要

We demonstrate highly efficient inverted bottom-emission organic light-emitting diodes (IBOLEDs) by using cesium hydroxide (CsOH) doped tris-(8-hydroxyquinoline) aluminum (Alq_3) as the electron injection layer on indium tin oxide cathode, which could significantly enhance the electron injection, resulting in a large increase in luminance and efficiency. The maximum luminance, current efficiency, and power efficiency reach 21 000 cd/cm~2, 6.5 cd/A, and 3.5 lm/W, respectively, which are 40%-50% higher in efficiency than that of IBOLEDs with cesium carbonate (Cs_2CO_3) doped Alq_3 as the electron injection layer, where the efficiencies are only 4.5 cd/A and 2.2 lm/W. Our results indicate that CsOH doped Alq_3 should be an effective electron injection layer on a wide range of electrodes to fabricate high performance OLEDs.
机译:我们通过使用氢氧化铯(CsOH)掺杂的三-(8-羟基喹啉)铝(Alq_3)作为铟锡氧化物阴极上的电子注入层,展示了高效的反向底部发射有机发光二极管(IBOLED)。电子注入,导致亮度和效率大大提高。最大亮度,电流效率和功率效率分别达到21000 cd / cm〜2、6.5 cd / A和3.5 lm / W,比带碳酸铯的IBOLED的效率高40%-50%( Cs_2CO_3)掺杂Alq_3作为电子注入层,其效率仅为4.5 cd / A和2.2 lm / W。我们的结果表明,掺杂CsOH的Alq_3应该是在大范围电极上的有效电子注入层,以制造高性能OLED。

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