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机译:铯衍生物掺杂的tris-(8-羟基喹啉)-铝在有机发光二极管中的有效性
Department of Electrical Engineering and Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, 10617, Taiwan, Republic of China;
Department of Electrical Engineering and Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, 10617, Taiwan, Republic of China;
Department of Electrical Engineering and Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, 10617, Taiwan, Republic of China;
Department of Electrical Engineering and Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, 10617, Taiwan, Republic of China;
organic electroluminescent devices; x-ray photoemission spectroscopy; ultraviolet photoemission spectroscopy; carrier injection;
机译:具有MoO_x p掺杂层的极低的导通电压和高亮度的三(8-羟基喹啉)铝基有机发光二极管
机译:Ca和缓冲层对基于tris-(8-hydroxyquinoline)铝的有机发光二极管性能的影响
机译:通过修改三(8-羟基喹啉)铝基有机发光二极管中解离的激发态量来控制磁导
机译:Novle Tris-(8-羟基喹啉)铝衍生物作为有机发光器件的电子传输材料
机译:铝(III)8-羟基喹啉的物理和化学老化:有机发光二极管(薄膜)的失效和材料设计。
机译:使用芴以将电子活性部分锁定在热活化的延迟荧光发射器中用于高性能的非掺杂有机发光二极管抑制滚动
机译:具有MoO(x)p掺杂层的超低导通电压和高亮度基于三(8-羟基喹啉)的铝基有机发光二极管
机译:硅掺杂砷化镓和砷化铝镓红外发光二极管的辐射功率降解