Comparison Of Leakage Behaviors In P- And N-type Metal-oxide-semiconductor Capacitors With Hafnium Silicon Oxynitride Gate Dielectric By Electron-beam-induced Current

摘要

The gate leakage behaviors of p- and n-type metal-oxide-semiconductor (p-MOS) capacitors with hafnium silicon oxynitride (HfSiON) gate dielectric were microscopically investigated by electron-beam-induced current (EBIC) technique. Carrier separated EBIC measurement has found that in nonstressed samples, hole conduction in pMOS is significantly enhanced by trap-assisted tunneling, while electron conduction in nMOS is independent of traps. After voltage stress, traps are induced in nMOS and enhanced electron conduction.