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Characterization of Hafnium Silicon Oxynitride Pseudo-ternary Gate Dielectrics for the Application of Germanium MOSFETs.

机译：用于锗MOSFET的Ox氮氧化硅伪三元栅极电介质的表征。

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作者
Kim, Jinwoo.;
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作者单位

North Carolina State University.;

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授予单位 North Carolina State University.;
学科 Materials science.;Electrical engineering.
学位 Ph.D.
年度 2011
页码 148 p.
总页数 148
原文格式 PDF
正文语种 eng
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1. MOCVD of hafnium silicate films obtained from a single-source precusor on silicon and germanium for gate-dielectric applications [J] . Lemberger M, Schon F, Dirnecker T, Chemical vapor deposition: CVD . 2007,第2a3期

机译：从硅和锗上的单源先驱体获得的硅酸ha薄膜的MOCVD，用于栅极介电应用
2. The Electrical and Material Characterization of Hafnium Oxynitride Gate Dielectrics With TaN-Gate Electrode [J] . Chang Seok Kang, Hag-Ju Cho, Rino Choi, IEEE Transactions on Electron Devices . 2004,第2期

机译：TaN-门电极对氧氮化Gate栅极电介质的电学和材料表征
3. Comparison Of Leakage Behaviors In P- And N-type Metal-oxide-semiconductor Capacitors With Hafnium Silicon Oxynitride Gate Dielectric By Electron-beam-induced Current [J] . Jun Chen, Takashi Sekiguchi, Naoki Fukata, Applied Physicsletters . 2008,第26期

机译：电子束感应电流与With氮氧化硅栅介质的P型和N型金属氧化物半导体电容器漏泄行为的比较
4. Electrical and phsyical characterization of ultrathin silicon oxynitride gate dielectric films formed by the jet vapor deposition technique [C] . A.Karamchetic, V.H.C.Watt, T.Y.Luo, Symposium on Structure and Electronic Properties of Ultrathin Dielectric Films on Silicon and Related Structures held November 29-December 1, 1999, Boston, Massachusetts, U.S.A. . 1999

机译：通过喷射气相沉积技术形成的超薄氧氮化硅栅介质膜的电学和物理特性
5. Growth and characterization of hafnium oxynitride gate insulators on silicon(100). [D] . Lee, Minsoo. 2005

机译：硅上氮氧化gate栅极绝缘体的生长和特性（100）。
6. Silicon Nanowires with High-k Hafnium Oxide Dielectrics for Sensitive Detection of Small Nucleic Acid Oligomers [O] . Brian R. Dorvel, Bobby Reddy Jr, Jonghyun Go, -1

机译：具有高k铪氧化物电介质的硅纳米线用于敏感检测小核酸低聚物
7. Two-dimensional(2D) subthreshold current and subthreshold swing modeling of double-material-gate(DMG) strained-Si(s-Si) on silicon-germanium(SiGe) MOSFETs. [O] . Mukhopadhyay A K 2014

机译：硅锗（SiGe）MOSFET上的双材料栅极（DMG）应变硅（s-Si）的二维（2D）亚阈值电流和亚阈值摆幅模型。

Characterization of Hafnium Silicon Oxynitride Pseudo-ternary Gate Dielectrics for the Application of Germanium MOSFETs.

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