Current-driven magnetization reversal at extremely low threshold current density in (Ga,Mn)As-based double-barrier magnetic tunnel junctions

摘要

Current-driven magnetic orientation reversal at an extremely low threshold current density, as low as 2.0 × 10~4 A/cm~2, has been achieved in (Ga,Mn)As-based double-barrier magnetic tunneling junctions (MTJs) sandwiched between top and bottom MTJs. The middle magnetic free layer thickness dependence clearly demonstrates that the low threshold current density is owing not only to the small magnetization of the magnetic free layer but also the enhancement of the spin torque caused by a spin-polarized current through the top and bottom MTJs.