Temperature and bias-voltage dependences of tunneling magnetoresistance in (Ga,Mn)As-based double-barrier magnetic tunnel junctions

摘要

We have investigated the temperature and bias-voltage dependences in the tunneling magnetoresistance (TMR) curves for (Ga,Mn)As-based double-barrier magnetic tunnel junctions (DB MTJs). The coercive fields in each magnetic (Ga,Mn)As layer drastically decrease depending on the variations in the temperature. TMR ratios decrease monotonically with increasing temperature. Furthermore, we have demonstrated that DB-MTJs not only enhance the TMR ratio effectively but also improve the strong bias-voltage characteristics.