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机译:GeSi界面层对嵌入Ge纳米晶体的SiO_2薄膜中Ge-Ge光学声子模的影响
Department of Physics and Nanjing National Laboratory of Microstructure, Nanjing University, Nanjing 210093, People's Republic of China;
Department of Physics and Nanjing National Laboratory of Microstructure, Nanjing University, Nanjing 210093, People's Republic of China;
Department of Physics and Nanjing National Laboratory of Microstructure, Nanjing University, Nanjing 210093, People's Republic of China Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong;
Department of Physics and Nanjing National Laboratory of Microstructure, Nanjing University, Nanjing 210093, People's Republic of China;
Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong;
机译:纳米尺寸对Si离子注入合成SiO_2中Si纳米晶体光学性能的影响
机译:GeO_x / SiO_2多层膜中Ge和GeSi纳米晶体的形成
机译:嵌入非晶SiO_2薄膜中的InAs-InP系统的纳米晶体的结构和光学表征
机译:GeO / SiO_2多层膜高温退火形成的GeSi纳米晶体:结构和光学性质
机译:用于完全嵌入式板级光互连的薄膜VCSEL和光互连层制造。
机译:GESI纳米晶体光学传感器用于光学检测滑动路况两种分类算法
机译:纤锌矿纳米晶中的界面和限制光学声子
机译:受限激子,声子及其在嵌入二氧化硅中的Ge纳米晶体中的相互作用