机译:快速熔化生长结合晶种定位技术的绝缘子上无缺陷的单晶锗岛阵列
Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan;
Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan;
Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan;
Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan;
Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan;
机译:通过从Si(1 1 1)微种子快速熔融生长获得的应变单晶GOI(绝缘体上的Ge)阵列
机译:Ni压印诱导的Si微晶种快速熔化在绝缘子上形成无缺陷Ge岛
机译:Ni压印诱导的Si微晶种快速熔化在绝缘子上形成无缺陷Ge岛
机译:利用选择性外延生长和激光结晶在绝缘岛上形成单晶硅层
机译:激光加热基座生长技术生长的稀土掺杂单晶YAG纤维
机译:通过快速熔化生长在绝缘体上实现无缺陷的高锡含量GeSn
机译:通过Si(111)微粒的快速熔化生长,应变单晶GOI(GE在绝缘体上)阵列
机译:种子凝固外延生长在绝缘子上的单晶硅薄膜生长