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Lateral Epitaxy by Seeded Solidification for Growth of Single-Crystal Si Films on Insulators

机译：种子凝固外延生长在绝缘子上的单晶硅薄膜生长

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Fan, J. C.; Geis, M. W.; Tsaur, B. Y.;
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年度 1980
页码 p.1-4
总页数 4
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Single crystals; Epitaxial growth; Semiconducting films; Silicon; Substrates; Insulation; Layers; Solidification; Seeding; Reprints;

机译：单晶;外延生长;半导体薄膜;硅;基板;绝缘;层;凝固;种子;重印;

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专利

1. Tensile-Strained Single-Crystal Si Film on Insulator by Epitaxially Seeded and Laser-Induced Lateral Crystallization [J] . Hans S. CHO, Wenxu XIANYU, Xiaoxin ZHANG, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2006,第10A期

机译：外延晶种和激光诱导的横向结晶在绝缘子上的拉伸应变单晶硅膜
2. Giant growth of single crystalline Ge on insulator by seeding lateral liquid-phase epitaxy [J] . T. Tanaka, M. Tanaka, M. Itakura, Thin Solid Films . 2010,第suppla1期

机译：晶种横向液相外延在绝缘子上单晶锗的巨大生长
3. Superconductor-insulator phase transition in single-crystal La_(2-x)Sr_xCuO_4 films grown by the liquid-phase epitaxy method [J] . A. T. M. Nazmul Islam, T. Hitosugi, E. Dudzik, Physical review . 2009,第2期

机译：液相外延法生长单晶La_（2-x）Sr_xCuO_4薄膜的超导体-绝缘体相变
4. Lateral epitaxy by seeded solidification for growth of single-crystal Si films on insulators [C] . Fan J.C.C., Geis M.W., Tsaur B.-Y. Electron Devices Meeting, 1980 International . -1

机译：通过晶种凝固进行横向外延以在绝缘子上生长单晶硅膜
5. Lateral epitaxial growth techniques for gallium nitride thin films on 6H-silicon carbide(0001) substrates via metalorganic vapor phase epitaxy. [D] . Thomson, Darren Brent. 2001

机译：通过有机金属气相外延在6H-碳化硅（0001）衬底上横向生长氮化镓薄膜的横向外延技术。
6. Wafer-scale single-crystal perovskite patterned thin films based on geometrically-confined lateral crystal growth [O] . Lynn Lee, Jangmi Baek, Kyung Sun Park, -1

机译：晶圆级单晶钙钛矿图案化薄膜基于几何约束的横向晶体生长
7. Single-Crystal Antimonene Films Prepared by Molecular Beam Epitaxy: Selective Growth and Contact Resistance Reduction of the 2D Material Heterostructure [O] . -1

机译：通过分子束外延制备的单晶锑膜：2D材料异质结构的选择性生长和接触电阻降低
8. Single-Crystal Si Films on SiO2 Prepared by Using a Stationary Graphite Heater for Lateral Epitaxy by Seeded Solidification [R] . Fan, J. C. C., Tsaur, B. Y., Geis, M. W. 1981

机译：采用固定石墨加热器制备siO2单晶si薄膜，通过种子凝固制备横向外延

Lateral Epitaxy by Seeded Solidification for Growth of Single-Crystal Si Films on Insulators

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