Strained single-crystal GOI (Ge on Insulator) arrays by rapid-melting growth from Si (1 1 1) micro-seeds

摘要

Liquid-phase epitaxial growth of Ge islands on insulator (COI) using Ni-imprint-induced Si (1 1 1) micro-crystal seeds (~1 μmΦ) is proposed. As a result, single-crystalline GOI (111) structures with large area (~10μmΦ) are realized. The transmission electron microscopy observations reveal no dislocation or stacking fault in the laterally grown regions. Moreover, the Raman measurements show that the tensile strain (~0.2%) which enhances the carrier mobility is induced in the growth regions. This new method can be employed to realize the multi-functional SiGe large scale integrated circuits. 【Keywords】Germanium (Ge);Ge on Insulator (GOI);Metal induced crystallization (MIC);Liquid-phase epitaxial growth;