Influence of the interface on the electronic channel switching of a Fe-Ag thin film on a Si substrate

J. Alonso; M. L. Fdez-Gubieda; G. Sarmiento; J. M. Barandiaran; A. Svalov; I. Orue; J. Chaboy; L. Fernandez Barqufn; C. Meneghini; T. Neisius; N. Kawamura

首页> 外文期刊>Applied Physicsletters >Influence of the interface on the electronic channel switching of a Fe-Ag thin film on a Si substrate

【24h】

Influence of the interface on the electronic channel switching of a Fe-Ag thin film on a Si substrate

机译：界面对Si衬底上Fe-Ag薄膜电子通道转换的影响

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Fe_xAg_(100-x) granular thin films, being 20

机译：通过脉冲激光沉积制备Fe

著录项

来源
《Applied Physicsletters》 |2009年第8期|082103.1-082103.3|共3页
作者
J. Alonso; M. L. Fdez-Gubieda; G. Sarmiento; J. M. Barandiaran; A. Svalov; I. Orue; J. Chaboy; L. Fernandez Barqufn; C. Meneghini; T. Neisius; N. Kawamura;
展开▼
作者单位

Departamento de Electricidad y Electronica, Universidad del Pais Vasco (UPV/EHU), Apartado 644, 48080 Bilbao, Spain;

Departamento de Electricidad y Electronica, Universidad del Pais Vasco (UPV/EHU), Apartado 644, 48080 Bilbao, Spain;

Departamento de Electricidad y Electronica, Universidad del Pais Vasco (UPV/EHU), Apartado 644, 48080 Bilbao, Spain;

Departamento de Electricidad y Electronica, Universidad del Pais Vasco (UPV/EHU), Apartado 644, 48080 Bilbao, Spain;

Departamento de Electricidad y Electronica, Universidad del Pais Vasco (UPV/EHU), Apartado 644, 48080 Bilbao, Spain;

SGiker, Universidad del Pals Vasco (UPV/EHU), Apartado 644, 48080 Bilbao, Spain;

Instituto de Ciencia de Materiales de Aragon, CSIC-Universidad de Zaragoza, 50009 Zaragoza, Spain;

CITIMAC, Universidad de Cantabria, 39005 Santander, Spain;

Dipartimento di Fisica 'E. Amaldi,' Universita di Roma 3, 00146 Roma, Italy;

CP2M laboratory, Universite Paul Cezanne, 13397 Marseille, France;

Japan Synchrotron Radiation Research Institute, 1-1-1 Kouto, Mikazuki, Savo, Hyogo 679-5148, Japan;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
入库时间 2022-08-18 03:19:49

相似文献

外文文献
中文文献
专利

1. Correction to “Influence of the Si Substrate on the Transport and Magnetotransport Properties of Nanostructured Fe-Ag Thin Films” [J] . Alonso J., Orue I., Fdez-Gubieda M. L., Magnetics, IEEE Transactions on . 2009,第9期

机译：对“硅衬底对纳米结构Fe-Ag薄膜的传输和磁传输特性的影响”的校正
2. Influence of the Si Substrate on the Transport and Magnetotransport Properties of Nanostructured Fe-Ag Thin Films [J] . Alonso J., Orue I., Fdez-Gubieda M. L., IEEE Transactions on Magnetics . 2008,第期

机译：硅衬底对纳米结构Fe-Ag薄膜传输和磁传输性能的影响
3. Influence of substrates on resistive switching behaviors of V-doped SrTiO_3 thin films [J] . Zhenhua Tang, Ying Xiong, Minghua Tang, Japanese journal of applied physics . 2014,第3期

机译：衬底对掺V的SrTiO_3薄膜的电阻转换行为的影响
4. Influence of interface wettability on explosive boiling of ultra-thin liquid films on a heated substrate using molecular dynamics simulations [C] . Haiyan Zhang, Cunhui Li, Meiwen Zhao, IEEE International Conference on Nano/Micro Engineered and Molecular Systems . 2017

机译：使用分子动力学模拟，界面润湿性对加热基底上超薄液膜爆炸沸腾的影响
5. Simulation of crack penetration/deflection and interfacial toughness at a bimaterial interface for thin films on a substrate. [D] . Roham, Sassan. 2004

机译：基材上薄膜的双材料界面处的裂纹渗透/挠度和界面韧性的仿真。
6. Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching [O] . Seungho Cho, Chao Yun, Stefan Tappertzhofen, -1

机译：具有可定制的纳米级离子和电子通道的自组装氧化膜可控制电阻切换
7. Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching [O] . Cho Seungho, Yun Chao, Tappertzhofen Stefan, 2016

机译：具有可定制的纳米级离子和电子通道的自组装氧化膜，可控制电阻切换

Influence of the interface on the electronic channel switching of a Fe-Ag thin film on a Si substrate

摘要

著录项

相似文献

相关主题

期刊订阅