首页> 外国专利> Thin-film transistor, switching circuit, active element substrate, electro-optical device, electronic apparatus, thermal head, droplet ejecting head, printer and thin-film-transistor driving and light-emitting display device

Thin-film transistor, switching circuit, active element substrate, electro-optical device, electronic apparatus, thermal head, droplet ejecting head, printer and thin-film-transistor driving and light-emitting display device

机译:薄膜晶体管,开关电路,有源元件基板,电光装置,电子设备,热敏头,液滴喷射头,打印机以及薄膜晶体管驱动发光显示装置

摘要

The invention reduces or prevents the performance of a driving thin-film transistor of a thin-film-transistor driving and light-emitting display device from deteriorating over time, while maintaining a function of allowing a large current to flow. In a driving thin-film transistor, a lightly doped region is provided only in a drain region (one-sided LDD structure). Alternatively, lightly doped regions are provided in both a source region and the drain region. The lightly doped region in the drain region is longer than the lightly doped region in the source region, resulting in an asymmetrical LDD structure.
机译:本发明减少或防止了薄膜晶体管驱动和发光显示装置的驱动薄膜晶体管的性能随时间恶化,同时保持了允许大电流流过的功能。在驱动薄膜晶体管中,仅在漏极区域(单侧LDD结构)中设置轻掺杂区域。可替代地,在源极区域和漏极区域两者中提供轻掺杂区域。漏极区中的轻掺杂区比源极区中的轻掺杂区更长,导致不对称的LDD结构。

著录项

  • 公开/公告号US2005098783A1

    专利类型

  • 公开/公告日2005-05-12

    原文格式PDF

  • 申请/专利权人 MUTSUMI KIMURA;

    申请/专利号US20040005033

  • 发明设计人 MUTSUMI KIMURA;

    申请日2004-12-07

  • 分类号H01L29/04;

  • 国家 US

  • 入库时间 2022-08-21 22:26:13

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