Carrier transport mechanisms in nonvolatile memory devices fabricated utilizing multiwalled carbon nanotubes embedded in a poly-4-vinyl-phenol layer

摘要

Transmission electron microscopy images showed that multiwalled carbon nanotubes (MWCNTs) were dispersed in a poly-4-vinyl-phenol (PVP) layer. Capacitance-voltage (C-V) measurements on the Al/MWCNTs embedded in a PVP layer/p-Si (100) devices at 300 K showed a clockwise hysteresis with a large Hatband voltage shift due to the existence of the MWCNTs. The magnitude of the flatband voltage shift in the C-V curve for the devices increased with increasing MWCNT concentration. The carrier transport mechanisms for the writing and the erasing processes for the Al/MWCNTs embedded in PVP/p-Si devices are described on the basis of the C-V results.