Carrier transport mechanisms of bistable memory devices fabricated utilizing core-shell CdSe/ZnSe quantum-dot/multi-walled carbon nanotube hybrid nanocomposites

摘要

Transmission electron microscopy images showed that conjugation between single core-shell CdSe/ZnSe quantum dots (QDs) and oxidized multi-walled carbon nanotubes (MWCNTs) was achieved through the complexation reaction. Current-voltage (I-V) measurements on Al/CdSe: MWCNT conjugated nanocomposite/indium-tin-oxide devices at 300 K showed that the on/off ratio of the current bistability was as large as about 10(4), which was significantly increased due to an enhancement of the carrier transfer efficiency between the CdSe/ZnSe QDs and the MWCNTs. Carrier transport mechanisms of the bistable memory devices fabricated utilizing CdSe/ZnSe QD/MWCNT hybrid nanocomposite are described on the basis of the I-V results.