Memory device utilizing carbon nanotubes and method of fabricating the memory device

摘要

A carbon nanotube memory device and a fabrication method thereof are provided. The carbon nanotube memory device includes a substrate (11), a source electrode (15), a drain electrode (17), a carbon nanotube (21), a memory cell (23), and a gate electrode (19). The source electrode (15) and the drain electrode (17) are arranged with a predetermined interval between them on the substrate (11) and subjected to a voltage. The carbon nanotube (21) connects the source electrode (15) to the drain electrode (17) and serves as a channel for charges. The memory cell (23) is located over the carbon nanotube (21) and stores charges from the carbon nanotube (21). The gate electrode (19) is formed in contact with the upper surface of the memory cell (23) and controls the amount of charge flowing from the carbon nanotube (21) into the memory cell (23). As described above, the carbon nanotube memory device includes the carbon nanotube (21) having a high conductivity and a high emissivity, and the memory cell (23) having an excellent charge storage capability, so that the memory device can function as a fast, highly-integrated memory device without errors.