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Enhancement of multiferroic properties of Pb(Fe_(1/2)Nb_(1/2))O_3 thin films on SrRuO_3 buffered SrTiO_3 substrates

机译:在SrRuO_3缓冲SrTiO_3基底上增强Pb(Fe_(1/2)Nb_(1/2))O_3薄膜的多铁性

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摘要

We report multiferroic properties of Pb(Fe_(1/2)Nb_(1/2))O_3 (or PFN) epitaxial thin layers grown on (001), (110), and (111) SrTiO_3 substrates with and without a SrRuO_3 (SRO) buffer. Our findings are as follows: (ⅰ) the constraint stress on (001) substrates is more than ten times larger than those on (110) and (111); (ⅱ) this large constraint stress induces higher piezoelectric constants, magnetic permeability and magnetization for (001) PFN compared with (110) and (111) layers; (ⅲ) epitaxy distorts the structure of (001) PFN causing the films to be weakly ferromagnetic, whereas (110) films are antiferromagnetic; and (ⅳ) a significant increase of the coercivity of (001) layers occurs due to clamping by a SRO buffer layer.
机译:我们报告了在(001),(110)和(111)SrTiO_3衬底上生长和不存在SrRuO_3的情况下Pb(Fe_(1/2)Nb_(1/2))O_3(或PFN)外延薄层的多铁性( SRO)缓冲区。我们的发现如下:(ⅰ)(001)衬底上的约束应力比(110)和(111)上的约束应力大十倍以上; (ⅱ)与(110)和(111)层相比,这种较大的约束应力导致(001)PFN产生更高的压电常数,磁导率和磁化强度; (ⅲ)外延使(001)PFN的结构变形,从而使薄膜具有弱铁磁性,而(110)薄膜具有反铁磁性; (ⅳ)由于被SRO缓冲层夹持,导致(001)层的矫顽力显着增加。

著录项

  • 来源
    《Applied Physicsletters》 |2009年第19期|142-144|共3页
  • 作者单位

    Department of Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA;

    Department of Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA;

    Department of Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA;

    Department of Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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  • 入库时间 2022-08-18 03:19:33

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