High-rate reactive ion etching of barium hexaferrite films using optimal CHF_3/SF_6 gas mixtures

摘要

The high-rate reactive ion etching of c-axis oriented quasi-single-crystal barium hexaferrite (BaM) films, deposited on 6-H silicon carbide (0001) substrates, has been demonstrated. Arrays of BaM columns, having diameters of 1-4 μm and sharp vertical walls, were etched from BaM films at rates as high as 75 nm/min using an optimized sulfur hexafluoride and methyl trifluoride (SF_6:CHF_3, 3:1) gas mixture. Lateral features as small as 43 nm were fabricated and imaged.