首页> 外国专利> Method of enhancing the c-axis perpendicular orientation of barium hexaferrite thin films and barium hexaferrite thin film recording media produced thereby

Method of enhancing the c-axis perpendicular orientation of barium hexaferrite thin films and barium hexaferrite thin film recording media produced thereby

机译:增强六价铁氧体薄膜的c轴垂直取向的方法以及由此生产的六价铁氧体薄膜记录介质

摘要

A method of making c-axis perpendicularly oriented barium hexaferrite thin films by the crystallization of amorphous barium hexaferrite on a platinum underlayer is provided. Using a thin underlayer of platinum, barium hexaferrite films can be deposited by conventional rf diode or magnetron sputtering. Such deposition may be performed at room temperature, after which excellent c-axis perpendicular orientation can be achieved by rapid ex-situ annealing. The c-axis perpendicular orientation can also be achieved through in- situ annealing.
机译:提供了一种通过在铂底层上结晶无定形六价铁酸钡来制造c轴垂直取向的六价铁酸钡薄膜的方法。使用铂的薄底层,可以通过常规的射频二极管或磁控溅射来沉积六价铁酸钡薄膜。这样的沉积可以在室温下进行,此后可以通过快速的非原位退火获得优异的c轴垂直取向。 c轴垂直方向也可以通过原位退火实现。

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