High Mobility Organic Thin Film Transistors Based On Monocrystalline Rubrene Films Grown By Low Pressure Hot Wall Deposition

摘要

Monocrystalline rubrene (5,6,11,12-tetraphenylnaphthacene) films with thickness between 1 and 10 μm and grain sizes as large as 100 μm × 2 mm were deposited on thin film transistor substrates at rates ～500 nm/min by a low pressure and hot wall deposition method. Organic thin film transistors with these high quality thin films as active channels have field effect mobility as high as 2.4 cm~2/V s and ON/OFF current ratios around 10~6. The morphology and crystallinity of rubrene films under different deposition conditions were also studied to determine the optimal film deposition conditions.