Low Pressure Hot Wall Deposition of Mono-crystalline Rubrene Thin Films for Organic Thin Film Transistors

摘要

Mono-crystalline Rubrene (5,6,11,12-Tetraphenylnaphthacene) thin films with thickness between 1μm and 10 μm with grain sizes as large as 100 μm × 2 mm were successfully deposited on OTS(octadecyltrichlorosilane) coated TFT substrates by a low pressure and hot wall deposition method. Organic thin film transistors based on these high quality thin films have μ{sub}(average) of 1.77 cm{sup}2/V-s and μ{sub}(max) of 2.47 cm{sup}2/V-s, ON/OFF current ratios around 10{sup}6. The morphologies and crystallinities of rubrene thin films deposited under different conditions were studied with X-ray diffraction analysis. The average field effect mobility values of OTFTs based on these rubrene films were also compared to determine the optimal film deposition conditions.