首页> 外国专利> MASK FOR VAPOR DEPOSITION FOR MANUFACTURING ORGANIC THIN FILM TRANSISTOR, METHOD OF MANUFACTURING ORGANIC THIN FILM TRANSISTOR USING THE SAME, AND ORGANIC THIN FILM TRANSISTOR

MASK FOR VAPOR DEPOSITION FOR MANUFACTURING ORGANIC THIN FILM TRANSISTOR, METHOD OF MANUFACTURING ORGANIC THIN FILM TRANSISTOR USING THE SAME, AND ORGANIC THIN FILM TRANSISTOR

机译:制造有机薄膜晶体管的蒸气沉积的掩模,使用相同薄膜制造有机薄膜晶体管的方法以及有机薄膜晶体管

摘要

PROBLEM TO BE SOLVED: To provide a mask for vapor deposition for manufacturing an organic TFT which makes it possible to form a high accurate patterning.;SOLUTION: The mask for the vapor deposition for manufacturing the organic TFT according to this invention is used in case of carrying out the vapor deposition of at least one patterning out of source and drain electrodes of the organic TFT, an organic semiconductor layer and a gate electrode. The mask for the vapor deposition is provided with a primary front surface suitable for a vapor-deposited substrate side and a secondary front surface suitable for a vapor deposition supply side. The primary front surface has a first opened window with at least one opening for forming the pattern and the secondary front surface has a second opened window with a substantially same shape as a shape consisting of the shortest outer line surrounding all openings of the first opened window. A distance D between the primary front surface and the secondary front surface and an opening width H in the channel length direction of the second opened window have the following relation: DH.;COPYRIGHT: (C)2008,JPO&INPIT
机译:解决的问题:提供一种用于制造有机TFT的气相沉积用掩模,该掩模可以形成高精度的图案。解决方案:情况下,使用根据本发明的用于制造有机TFT的气相沉积用掩模。从有机TFT的源电极和漏电极,有机半导体层和栅电极中进行至少一种图案的气相沉积的方法。用于气相沉积的掩模设置有适合于气相沉积的基板侧的主前表面和适合于气相沉积供给侧的副前表面。第一前表面具有第一开口窗口,该第一开口窗口具有至少一个用于形成图案的开口,并且第二前表面具有第二开口窗口,该第二开口窗口的形状与由围绕该第一开口窗口的所有开口的最短外线组成的形状基本相同。 。第一正面和第二正面之间的距离D和第二打开的窗口在通道长度方向上的开口宽度H具有以下关系:D> H 。;版权:(C)2008,JPO&INPIT

著录项

  • 公开/公告号JP2008159923A

    专利类型

  • 公开/公告日2008-07-10

    原文格式PDF

  • 申请/专利权人 SHARP CORP;

    申请/专利号JP20060348214

  • 发明设计人 NAKANISHI YASUTETSU;

    申请日2006-12-25

  • 分类号H01L21/336;H01L29/786;H01L51/05;H01L21/285;H01L21/28;C23C14/04;C23C14/24;C23C14/50;C23C14/12;

  • 国家 JP

  • 入库时间 2022-08-21 20:23:06

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