机译:应变调整型无磷GaN基白色发光二极管的发光特性
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics,Peking University, Beijing 100871, China;
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics,Peking University, Beijing 100871, China;
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics,Peking University, Beijing 100871, China;
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics,Peking University, Beijing 100871, China;
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics,Peking University, Beijing 100871, China;
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics,Peking University, Beijing 100871, China;
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics,Peking University, Beijing 100871, China;
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics,Peking University, Beijing 100871, China;
机译:n型区域再生的无磷GaN基横向结白光发光二极管
机译:选择性生长的GaN微面上的InGaN / GaN多量子阱及其在无磷白光发光二极管中的应用
机译:铜基板上的无磷InGaN / GaN线中白光发光二极管
机译:基于InGaN / GaN量子阱的无磷白光发光二极管
机译:碳化硅发光特性的研究及其在发光二极管中的应用
机译:电气驱动的无磷白色发光二极管采用基于氮化镓的双同心截头金字塔结构
机译:选择性生长的GaN微平面上的InGaN / GaN多量子阱以及无荧光白光发光二极管的应用