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机译:在多个量子阱和n-GaN层之间具有插入层的GaN基发光二极管中的效率下降特性
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, 1001 University Road, Hsinchu 300, Taiwan ,R and D Division, Epistar Co. Ltd., Science-based Industrial Park, Hsinchu 300, Taiwan;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, 1001 University Road, Hsinchu 300, Taiwan;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, 1001 University Road, Hsinchu 300, Taiwan;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, 1001 University Road, Hsinchu 300, Taiwan;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, 1001 University Road, Hsinchu 300, Taiwan;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, 1001 University Road, Hsinchu 300, Taiwan;
R and D Division, Epistar Co. Ltd., Science-based Industrial Park, Hsinchu 300, Taiwan;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, 1001 University Road, Hsinchu 300, Taiwan;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, 1001 University Road, Hsinchu 300, Taiwan;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, 1001 University Road, Hsinchu 300, Taiwan;
机译:基于GaN / IngaN的多量子阱发光二极管效率下垂的效率下垂通过不同的Si掺杂和厚度在阻挡层中
机译:使用SiO_2光子准晶体过度生长来增强n-GaN层上基于GaN的发光二极管的光提取效率
机译:两个n电子阻挡层对InGaN / GaN多量子阱蓝色发光二极管内部量子效率下降的影响
机译:梯度组成的电子阻挡层改善GaN基发光二极管的效率下降
机译:研究和优化GaN基发光二极管中的载流子传输,载流子分布和效率下降
机译:梯度铟成分p型InGaN层增强GaN基绿色发光二极管的量子效率
机译:渐变铟组合物P型Ingan层的甘油基绿光二极管量子效率提高
机译:单片二维表面发射应变层InGaas / alGaas和alInGaas / alGaas二极管激光器阵列,具有超过50%的差分量子效率