Effect of two n-electron blocking layers on internal quantum efficiency droop of InGaN/GaN multi-quantum well blue light-emitting diode

Rohila N.K.; Singh S.; Pal S.; Dhanavantri C.

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Effect of two n-electron blocking layers on internal quantum efficiency droop of InGaN/GaN multi-quantum well blue light-emitting diode

机译：两个n电子阻挡层对InGaN / GaN多量子阱蓝色发光二极管内部量子效率下降的影响

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摘要

We have simulated the effect of two n-electron blocking layers with varied aluminum composition in AlGaN. Usual 20nm n-AlGaN electron blocking layer was replaced with two AlGaN layers with varied Al composition.

机译：我们已经模拟了AlGaN中具有不同铝成分的两个n电子阻挡层的作用。通常的20nm n-AlGaN电子阻挡层被具有不同Al组成的两个AlGaN层代替。

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来源
《Journal of optoelectronics and advanced materials》 |2010年第6期|共3页
作者
Rohila N.K.; Singh S.; Pal S.; Dhanavantri C.;
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正文语种 eng
中图分类光电子技术、激光技术;
关键词
Efficiency droop; Electron blocking layer (EBL); Internal quantum efficiency (IQE); Light-emitting diodes (LEDs); Multi quantum well (MQW);

机译：效率下降;电子阻挡层（EBL）;内部量子效率（IQE）;发光二极管（LED）;多量子阱（MQW）;

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专利

1. Effect of two n-electron blocking layers on internal quantum efficiency droop of InGaN/GaN multi-quantum well blue light-emitting diode [J] . Rohila N.K., Singh S., Pal S., Journal of optoelectronics and advanced materials . 2010,第6期

机译：两个n电子阻挡层对InGaN / GaN多量子阱蓝色发光二极管内部量子效率下降的影响
2. Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes [J] . Sang-Heon Han, Dong-Yul Lee, Sang-Jun Lee, Applied Physicsletters . 2009,第23期

机译：电子阻挡层对InGaN / GaN多量子阱发光二极管中效率下降的影响
3. Effect of Internal Electric Field in Well Layer of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes on Efficiency Droop [J] . Sang-Heon Han, Dong-Yul Lee, Jin-Young Lim, Japanese journal of applied physics . 2012,第10ISSUE1期

机译：InGaN / GaN多量子阱发光二极管的阱层中的内部电场对效率下降的影响
4. Reducing Efficiency Droop for Si-Doped Barrier Model of GaN/InGaN Multi-quantum Well Light-Emitting Diode by Designing Electron Blocking Layer [C] . Pramila Mahala, Amit K. Goyal, Sumitra Singh, International communications conference . 2019

机译：通过设计电子阻挡层减少GaN / IngaN多量子孔发光二极管的Si-掺杂屏障模型的效率下垂
5. Device engineering for internal quantum efficiency enhancement and efficiency droop issue in III-nitride light-emitting diodes [D] . Liu, Guangyu. 2013

机译：III型氮化物发光二极管内部量子效率提高和效率下降问题的设备工程
6. Quantum Efficiency Enhancement of a GaN-Based Green Light-Emitting Diode by a Graded Indium Composition p-Type InGaN Layer [O] . Quanbin Zhou, Hong Wang, Mingsheng Xu, 2018

机译：梯度铟成分p型InGaN层增强GaN基绿色发光二极管的量子效率
7. Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer [O] . Ju, Z. G., Liu, W., Zhang, Z. H., 2014

机译：具有AlGaN / GaN / AlGaN量子阱结构的电子阻挡层的蓝色InGaN / GaN发光二极管的优势

Effect of two n-electron blocking layers on internal quantum efficiency droop of InGaN/GaN multi-quantum well blue light-emitting diode

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