Mid-infrared surface-emitting photonic crystal microcavity light emitter on silicon

摘要

We describe an IV-VI semiconductor light emitter consisting of a PbSe/PbSrSe multiple quantum well active region grown by molecular beam epitaxy on a patterned Si(111) substrate with a two dimensional (2D) photonic crystal (PC) array. The 2D PC array was designed to form photonic band gaps around 1960 and 2300 cm~(-1). Under pulsed optical pumping, light emission was observed with strongly coupled PC defect modes, which correspond well with simulated photonic band gaps. The observed spectral linewidth was around 10 cm~(-1) and the highest quantum efficiency measured was 12.8%.