Room temperature mid-infrared surface-emitting photonic crystal laser on silicon

摘要

We demonstrate a mid-infrared surface-emitting photonic crystal laser on silicon substrate operating at room temperature. The active region consisting of PbSe/PbSrSe multiple quantum wells was grown by molecular beam epitaxy on Si(111) substrate patterned with a photonic crystal (PC) array. The PC array forms a transverse magnetic polarized photonic bandgap at around 2840 cm~(-1). Under pulsed optical pumping, room temperature multimode lasing emissions were observed at wavelength ～3.5μm with estimated threshold peak pumping intensity of 24kW/cm~2. Angular-dependent measurement indicates the lasing is of a Gaussian-like profile with full width at half maximum of 4.66°.