Air-stable n-type organic thin-film transistor array and high gain complementary inverter on flexible substrate

摘要

Air-stable n-type organic thin-film transistor (TFT) arrays and a complementary inverter circuit were fabricated on a flexible substrate. A benzobis(thiadiazole) (BBT) derivative-based TFT showed excellent air- stability and performances such as an electron mobility of over 0.1 cm~2/V s, a large ON/OFF ratio over 10~8 when combined with a cross-linkable olefin-type polymer gate dielectric. In addition, an organic complementary inverter that combined the BBT derivative and a pentacene TFT demonstrated a sharp switching behavior and a high gain of over 150. We attribute these excellent characteristics to a combination of the low-lying lowest unoccupied molecular orbital level of n-type semiconductor material and the low interface trap of the gate dielectric.