Memristive behaviors of LiNbO_3 ferroelectric diodes

摘要

Memristive systems are expected to lead to analog computers that process information the way the human brain does. In this work, memristive behaviors have been revealed in ferroelectric diodes employing LiNbO_3. The conduction states in such diodes can be continually modulated by the successive voltage sweeps, which is essentially based on electron tunneling through a thin residual barrier. The role of oxygen vacancies in such memristive behaviors is also discussed.