Effect of Annealing Time on Memristive Behavior of Sol-Gel Spincoated ZnO-Based Memristive Device

摘要

This work focuses on the memristive behaviour of zinc oxide-based memristive device that was prepared by sol-gel spin coating technique to deposit ZnO. The substrate used is ITO as the bottom electrode. The top electrode is platinum. The deposited thin films were; one non-annealed sample and the rest are annealed for 30, 60 and 120 minutes each under 350°C temperature. The electrical properties were characterized to observe the switching behaviour and resistance ratio of the thin films. The sample annealed for 60 minutes shown the best memristive behaviour with highest resistance ratio and smoothest surface as observed by FESEM and AFM image. As the annealing time increased, the EDS images had shown that more oxygen vacancies exist in thin film, which are desirable for better memristive switching.