Memristive behaviors of LiNbO3 ferroelectric diodes

摘要

Memristive systems are expected to lead to analog computers that process information the way thenhuman brain does. In this work, memristive behaviors have been revealed in ferroelectric diodesnemploying LiNbO3. The conduction states in such diodes can be continually modulated by thensuccessive voltage sweeps, which is essentially based on electron tunneling through a thin residualnbarrier. The role of oxygen vacancies in such memristive behaviors is also discussed. © 2010nAmerican Institute of Physics. u0004doi:10.1063/1.3462067