Stochastic base doping and quantum-well enhancement of recombination in an n-p-n light-emitting transistor or transistor laser

摘要

Data and analysis are presented showing that heavy p-type stochastic doping of the base barrier region of an n-p-n quantum-well (QW) light-emitting transistor (LET) or transistor laser (TL), the acceptors within tunneling range of the QW and perturbing the QW, enhances the LET or TL base recombination (base current) and the device speed (bandwidth). A relationship between the spontaneous recombination rate (1/lifetime, 1/τ) and the base current density is derived by considering (stochastic-doping) modified rate balance equations involving the spontaneous, A_(21), and stimulated recombination coefficients, B_(21)=B_(12) and is verified with experimental optical microwave modulation (bandwidth) data obtained on QW-LETs.