机译:碳,硅和锗纳米粒子中空位引起的自旋极化的量子限制效应:密度泛函分析
School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People's Republic of China;
School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People's Republic of China;
School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People's Republic of China;
Department of Chemistry, North Carolina State University, Raleigh, North Carolina 27695-8204, USA;
机译:碳,硅和锗纳米粒子中空位引起的自旋极化的量子限制效应:密度泛函分析
机译:量子点中的相关性和自旋极化:重新审视局部自旋密度泛函理论
机译:碳,硅,锗及其各自离子类似物的氢钝化纳米能量的密度官能研究
机译:利用密度函数理论对小型硅量子点的量子限制效应的第一原理研究
机译:硅/硅锗垂直量子点中由应变引起的量子约束的物理学。
机译:表面功能化的硅和锗纳米粒子的细胞毒性:表面电荷的主导作用。
机译:孪晶硅和锗纳米晶体:形成,稳定性和量子限制