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Electrically tunable electron g factors in coupled InAs/GaAs pyramid quantum dots

机译:耦合的InAs / GaAs金字塔量子点中的电可调电子g因子

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摘要

The electron g factors of coupled InAs/GaAs quantum dots under external magnetic and electric fields are investigated by using the eight-band k·p model. The resonant coupling between the two dots remains under electric fields below 8.2 mVm, and is broken above the critical field due to the quantum Stark effect. By applying electric fields, a sign reverse of g factors is observed, and an electric field tunable zero g factor is found in the quantum dot molecules. Spin-orbit interactions nicely explain the transition mechanism of g factors under external electric fields.
机译:利用八波段k·p模型研究了耦合InAs / GaAs量子点在外部磁场和电场下的电子g因子。两个点之间的共振耦合保持在低于8.2 mV / nm的电场下,并且由于量子斯塔克效应而在临界场之上断裂。通过施加电场,观察到g因子的符号反转,并且在量子点分子中发现了电场可调的零g因子。自旋轨道相互作用很好地解释了外电场作用下g因子的跃迁机制。

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  • 来源
    《Applied Physicsletters》 |2010年第6期|062108.1-062108.3|共3页
  • 作者单位

    Key Laboratory of Polarized Materials and Devices, East China Normal University, Shanghai 200062, People's Republic of China;

    Key Laboratory of Polarized Materials and Devices, East China Normal University, Shanghai 200062, People's Republic of China;

    Key Laboratory of Polarized Materials and Devices, East China Normal University, Shanghai 200062, People's Republic of China;

    Key Laboratory of Polarized Materials and Devices, East China Normal University, Shanghai 200062, People's Republic of China;

    Key Laboratory of Polarized Materials and Devices, East China Normal University, Shanghai 200062, People's Republic of China;

    Key Laboratory of Polarized Materials and Devices, East China Normal University, Shanghai 200062, People's Republic of China;

    Key Laboratory of Polarized Materials and Devices, East China Normal University, Shanghai 200062, People's Republic of China;

    Key Laboratory of Polarized Materials and Devices, East China Normal University, Shanghai 200062, People's Republic of China;

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  • 正文语种 eng
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