机译:耦合的InAs / GaAs金字塔量子点中的电可调电子g因子
Key Laboratory of Polarized Materials and Devices, East China Normal University, Shanghai 200062, People's Republic of China;
Key Laboratory of Polarized Materials and Devices, East China Normal University, Shanghai 200062, People's Republic of China;
Key Laboratory of Polarized Materials and Devices, East China Normal University, Shanghai 200062, People's Republic of China;
Key Laboratory of Polarized Materials and Devices, East China Normal University, Shanghai 200062, People's Republic of China;
Key Laboratory of Polarized Materials and Devices, East China Normal University, Shanghai 200062, People's Republic of China;
Key Laboratory of Polarized Materials and Devices, East China Normal University, Shanghai 200062, People's Republic of China;
Key Laboratory of Polarized Materials and Devices, East China Normal University, Shanghai 200062, People's Republic of China;
Key Laboratory of Polarized Materials and Devices, East China Normal University, Shanghai 200062, People's Republic of China;
机译:耦合的InAs / GaAs金字塔量子点中的电可调电子g因子
机译:Quantum被局限于inAs / GaAs二维电子气体耦合的INAS量子点的光致发光的温度依赖性
机译:Quantum受限于INAS / GaAs二维电子气体耦合的INAS量子点的光致发光的温度依赖性(Vol 53,PG 484,2019)
机译:在INAS量子点之间的耦合和应变IngaAs / GaAs耦合量子阱:一种新型量子点
机译:在2-D电场下探索InAs / GaAs量子点和量子点分子中的单孔状态
机译:四电子InGaAs耦合量子点中的磁可调谐单重态-三重态自旋量子比特
机译:错误到:量子狭窄的insumsum圆点光致发光与Algaas / GaAs二维电子气体的光致发光的温度依赖性