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Negative differential resistance in GaN nanowire network

机译：GaN纳米线网络中的负差分电阻

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摘要

Negative differential resistance of gallium nitride nanowire networks deposited on an interdigitated electrode configuration patterned on a silicon dioxide/high resistivity Si substrate is experimentally demonstrated at room temperature. This effect is attributed to tunnelling between crossed gallium nitride nanowires.
机译：在室温下通过实验证明了沉积在图案化在二氧化硅/高电阻率Si衬底上的叉指电极配置上的氮化镓纳米线网络的负差分电阻。该效应归因于交叉氮化镓纳米线之间的隧穿。

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  • 来源
    《Applied Physicsletters》 |2010年第5期|053116.1-053116.3|共3页
  • 作者

    M. Dragoman; G. Konstantinidis; A. Cismaru; D. Vasilache; A. Dinescu; D. Dragoman; D. Neculoiu; R. Buiculescu; G. Deligeorgis; A. P. Vajpeyi; A. Georgakilas;

  • 作者单位

    National Research and Development Institute in Microtechnology, Str. Erou Iancu Nicolae 32B,077190 Bucharest, Romania;

    Microelectronics Research Group, IESL, FORTH, P. O. Box 1385, 71110 Heraklion-Crete, Greece;

    National Research and Development Institute in Microtechnology, Str. Erou Iancu Nicolae 32B,077190 Bucharest, Romania;

    National Research and Development Institute in Microtechnology, Str. Erou Iancu Nicolae 32B,077190 Bucharest, Romania;

    National Research and Development Institute in Microtechnology, Str. Erou Iancu Nicolae 32B,077190 Bucharest, Romania;

    Department of Physics, University of Bucharest, P.O. Box MG-11, 077125 Bucharest, Romania;

    Department of Electronics, Polytechnics University of Bucharest, 1-3 Iuliu Maniu Av.,061071 Bucharest, Romania;

    Department of Chemistry, University of Crete, Vassilika Vouton, Heraklion, Crete, Greece;

    Microelectronics Research Group, IESL, FORTH, P. O. Box 1385, 71110 Heraklion-Crete, Greece;

    Microelectronics Research Group, IESL, FORTH, P. O. Box 1385, 71110 Heraklion-Crete, Greece;

    Microelectronics Research Group, IESL, FORTH, P. O. Box 1385, 71110 Heraklion-Crete, Greece;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 入库时间 2022-08-18 03:18:41

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