Low-voltage transparent electric-double-layer ZnO-based thin-film transistors for portable transparent electronics

摘要

Room-temperature deposited 8.0 μm-thick mesoporous SiO_2 dielectric shows a huge electric double layer (EDL) gate specific capacitance (4.16 μF/cm~2). Battery drivable low-voltage (1.5 V) transparent EDL thin-film transistors (TFTs) with Al-doped ZnO nanocrystal channel layer gated by such dielectric are fabricated at room-temperature. The TFTs exhibit high-performance n-type transistor characteristics with a high field-effect mobility of 14.9 cm~2/V s. The current on/off ratio and subthreshold gate voltage swing are estimated to be 2×10~6 and 82 mV/decade, respectively. Our results demonstrate that mesoporous SiO_2 dielectrics with EDL effect are very promising for battery-powered portable transparent macroelectronics on temperature-sensitive substrates.