Low-voltage ZnO thin-film transistors with high-K Bi_(1.5) Zn_(1.0)Nb_(1.5)O_7 gate insulator for transparent and flexible electronics

摘要

We report on the fabrication of field-effect transistors with transparent oxide semiconductor ZnO serving as the electron channel and high-K Bi_(1.5)Zn_(1.0)Nb_(1.5)O_7 (BZN) as the gate insulator. The devices exhibited very low operation voltages ( < 4 V) due to high capacitance of the BZN dielectric. The field effect mobility and the current on/off ratio were 0.024 cm~2/V s and 2 X 10~4, respectively, at an operating voltage of 4 V. The threshold voltage and subthreshold swing were 2 V and 0.25 V/dec, respectively. The high optical transparency ( > 80% for wavelength > 400 nm), low-temperature processing, and low operation voltage of ZnO-based thin-film transistors with integrated BZN dielectric offer a promising route for the development of transparent and flexible electronics.