Study of slow oxide trap creating random telegraph noise within a gate edge overlap region in inversion mode

摘要

We investigated a slow oxide trap causing a random telegraph noise (RTN) within a gate edge overlap region in an inversion mode at metal/high-k dielectric nMOSFETs. The oxide trap was observed to generate RTN only in gate leakage current (I_g RTN) without in drain current (I_d RTN) in the inversion mode. Through the analysis of the RTN dependence on drain, source, and body bias, we found that the oxide trap in the dielectric exists not within the channel area but within the gate edge overlap region, resulting in the absence of I_d RTN.