Influence of localized electric field on the bandedge emission of hybrid Au-GaN/lnGaN quantum wells

摘要

The modification in the bandgap of single GaN/InGaN quantum wells in the presence of a gold thin film with surface plasmon polariton energy off-resonant and resonant to the photoluminesnce emission energy is studied. The quantum well emission energy can be either blue shifted or red-shifted depending on the localized electric field induced by the metal thin film. A theory of electrostatic image charge induced alteration of the confinement potential is presented to explain the observed experimental shifts.