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A Fano-type interference enhanced quantum dot infrared photodetector

机译:Fano型干涉增强型量子点红外光电探测器

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摘要

In this letter, we report a quantum dot photodetector enhanced by Fano-type interference in a metallic two-dimensional (2D) subwavelength hole array (2DSHA). The photocurrent enhancement wavelength shows an offset from the plasmonic resonant peak and corresponds to a dip in the transmission spectrum of the 2DSHA structure. The offset is attributed to the Fano-type interference in the 2DSHA structure. The asymmetric line shapes of the plasmonic resonance are analyzed and agree well with the two-peak Fano-type interference model. Over 100% enhancement in photodetectivity and photoresponsivity is achieved at the wavelength of the Fano dip of the first order plasmonic mode.
机译:在这封信中,我们报告了一种通过金属二维(2D)亚波长孔阵列(2DSHA)中的Fano型干涉增强的量子点光电探测器。光电流增强波长显示出与等离子体共振峰的偏移,并且对应于2DSHA结构的透射光谱中的下降。偏移量归因于2DSHA结构中的Fano型干涉。分析了等离子体共振的不对称线形,并与两峰Fano型干涉模型非常吻合。在一级等离激元模的法诺倾角的波长处,实现了超过100%的光探测性和光响应性增强。

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  • 来源
    《Applied Physics Letters》 |2011年第21期|p.2011111.1-2011111.3|共3页
  • 作者单位

    Department of Electrical and Computer Engineering, University of Massachusetts Lowell,One University Avenue, Lowell, MA 01854, USA;

    Applied NanoFemto Technologies, LLC 181 Stedman St. #2, Lowell, Massachusetts 01851, USA;

    Department of Electrical and Computer Engineering, University of Massachusetts Lowell,One University Avenue, Lowell, MA 01854, USA;

    Department of Electrical and Computer Engineering, University of Massachusetts Lowell,One University Avenue, Lowell, MA 01854, USA;

    Department of Electrical and Computer Engineering, University of Massachusetts Lowell,One University Avenue, Lowell, MA 01854, USA;

    Department of Electrical and Computer Engineering, University of Massachusetts Lowell,One University Avenue, Lowell, MA 01854, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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