新型量子点场效应增强型单光子探测器

摘要

In order to solve the problem of low light absorption efficiency of single photon detectors based on quantum-dot gated field effect transistor (QDFET), a new type of quantum-dot gated field effect enhanced single-photon detectors (QDFEE-SPD) was proposed. QDFEE-SPD was designed with a resonant cavity, and the GaAs/AlAs multilayer was used as the basic mirror. The light absorption efficiency and responsivity of QDFEE-SPD were analyzed and simulated. Results show that, compared with that without cavity, the absorption efficiency and responsivity of the QDFEE-SPD is greatly improved. Also for the optimization of light absorption efficiency, the thickness of the absorption layer should normally be 0.1-0.5 µm. Then the material samples of QDFEE-SPD were grown and tested. Reflection spectroscopy and PL spectroscopy testing results show that the light absorption efficiency has been significantly enhanced. The achievements in this article provide a new way for researching high-efficiency single-photon detection technology based on QDFET.%针对量子点场效应单光子探测器(QDFET)光吸收效率低下的问题，提出了一种新型量子点场效应增强型单光子探测器(QDFEE-SPD). QDFEE-SPD增加了共振腔的设计，并采用了GaAs/AlAs多层膜作为下反射镜；对QDFEE-SPD的光吸收增强效应和光响应度进行了理论分析和模拟，结果表明，与没有共振腔时相比， QDFEE-SPD的吸收效率和光相应度都有了大幅度的提升，同时为了光吸收的最优化，吸收层厚度一般应在0.1-0.5µm；对QDFEE-SPD的材料样品进行了生长和测试实验，反射谱测试和PL谱测试结果表明， QDFEE-SPD对入射光的吸收具有了明显的增强效应.文章成果为高效率量子点场效应单光子探测技术的研究提供了新的思路.