Carrier recombination processes in Mg-doped N-polar InN films

摘要

We investigate the nonradiative carrier recombination (NR) process in Mg-doped p-InN films having lower photoluminescence (PL) intensity than n-InN films. The NR activation energy in the p-type films is found to be in a range of 9-15 meV, which is smaller than that in n-InN films (40-65 meV). We also investigate the effect of the greater mean free path of minority carriers in p-InN. At room temperature the collision rate of minority carriers with NR centers within the radiative lifetime in p-InN is found to be three orders of magnitude greater than that in n-InN.