A method to characterize the sheet resistance of a laser doped lineon crystalline silicon wafers for photovoltaic applications

摘要

A theory is presented that correlates the different sheet resistance (R_sh) values of the same phosphorus laser doped (LD) line approximated by two different methods: the LD box and transfer length measurement (TLM) methods. By modeling the LD line junction profile, an effective R_sh value using the LD box method is obtained and used to derive the R_sh upper limit (R_sh.ui) of the LD line. This value matches within ± 10% of the R_(sh)UL value obtained using the TLM method across four lasing speeds. Subsequently, a LD box method is introduced to determine the LD line R_(sh)_UL easily without modeling work.