Hole mobility enhancement in ln_(0.41)Ga_(0.59)Sb quantum-well field-effect transistors

摘要

The impact of (110) uniaxial strain on the characteristics of p-channel ln_(0.41)Ga_(0.59)Sb quantum-well field-effect transistors (QW-FETs) is studied through chip-bending experiments. Uniaxial strain is found to affect the linear-regime drain current and the threshold voltage of the FET through the modulation of the hole mobility of the two-dimensional hole gas (2DHG) in the QW-FET. The piezoresistance coefficients of the 2DHG have been determined to be π<110>=1.17 × 10~(-10) cm~2/dyn and π⊥<110>=-1.9× 10~(-11) cm~2/dyn. The value of π<110> is 1.5 times that of holes in Si metal-oxide-semiconductor (MOS) field-effect transistors and establishes InGaSb as a promising material system for a future III-V complementary MOS (CMOS) technology.