Comparison of spin signals in silicon between nonlocal four-terminal and three-terminal methods

摘要

The three-terminal (3T) measurement is a method of detecting spin accumulation at a ferromagnetic/ semiconductor interface. Spin polarization (P) at the injector with an electric field (P_(injector)) and that at the detector without an electric field (P_(detector)) were measured separately by using the nonlocal (NL)-Hanle and 3T measurements, and Pi_(njector) and P_(detector) exhibited the same behavior with increasing temperature. We also found that the spin lifetime (τ_(sp)) in highly doped silicon measured by using the 3T method coincides with that estimated by the NL-Hanle measurement, which shows that the localized state does not exist at the interface.